Effect of extreme mechanical densification on the electrical properties of carbon nanotube micro-yarns.

We have explored the effect of high pressure post-treatment in optimizing the properties of carbon nanotube yarns and found that the application of dry hydrostatic pressure reduces porosity and enhances electrical properties. The CNT yarns were prepared by the dry-spinning method directly from CNT arrays made by the hot filament chemical vapour deposition (HF-CVD) process. Mechanical hydrostatic pressure up to 360 MPa induces a decrease in yarn resistivity between 3% and 35%, associated with the sample's permanent densification, with CNT yarn diameter reduction of 10%-25%. However, when increasing the pressure in the 1-3 GPa domain in non-hydrostatic conditions, the recovered samples show lower electrical conductivity. This might be due to concomitant macroscopic effects such as increased twists and damage to the yarn shown by SEM imaging (caused by strong shear stresses and friction) or by the collapse of the CNTs indicated byin situhigh pressure Raman spectroscopy data.

Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe2 monolayer.

In this work, we study growth and migration of atomic defects in MoSe2 on graphene using multiple advanced transmission electron microscopy techniques to explore defect behavior in vdW heterostructures. A MoSe2/graphene vdW heterostructure is prepared by a direct growth of both monolayers, thereby attaining an ideal vdW interface between the monolayers. We investigate the intrinsic defects (inversion domains and grain boundaries) in synthesized MoSe2, their evolution amid growth processing steps, and their influence on the formation and movement of extrinsic defects. Electron diffraction identifies a preferential interlayer orientation of 2° between MoSe2 and graphene, which is caused by the presence of intrinsic IBD defects. Extrinsic defects (point and line defects) are generated by in situ electron irradiation in the MoSe2 layer. Our results shed light on how to independently modify the MoSe2 atomic structure in vdW heterostructures for potential utilization in device processing.

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines.

In this work, tunable MEMS capacitors are realized using a vertically grown carbon nanotube array. The vertical CNT array forms an effective CNT membrane, which can be electrostatically actuated like the conventional metal plates used in MEMS capacitors. The CNT membrane is grown on titanium nitride metal lines, with a Al/Fe bi-layer as buffer layer and catalyst material respectively, using chemical vapor deposition process. Two different anchor configurations are investigated. A maximum capacitance of 400 fF and maximum tunability of 5.8% is extracted from the S-parameter measurements. Using the tunable MEMS vertical array capacitor a voltage controlled oscillator (VCO) is demonstrated showing promise for integrating CNTs for communications applications.

Compatibility assessment of CVD growth of carbon nanofibers on bulk CMOS devices.

We compare the level of deterioration in the basic functionality of individual transistors on ASIC chips fabricated in standard 130 nm bulk CMOS technology when subjected to three disparate CVD techniques with relatively low processing temperature to grow carbon nanostructures. We report that the growth technique with the lowest temperature has the least impact on the transistor behavior.